| PART |
Description |
Maker |
| FUF2005 FUF2007 FUF2006 FUF2004 FUF2003 FUF2002 FU |
50 V, 2 A glass passivated ultrafast recovery rectifier
100 V, 2 A glass passivated ultrafast recovery rectifier
200 V, 2 A glass passivated ultrafast recovery rectifier
400 V, 2 A glass passivated ultrafast recovery rectifier
800 V, 2 A glass passivated ultrafast recovery rectifier
1000 V, 2 A glass passivated ultrafast recovery rectifier
600 V, 2 A glass passivated ultrafast recovery rectifier
RECTIFIER DIODE, DO-15
Ultrafast Recovery Rectifiers 超快恢复二极
|
Fagor
International Rectifier, Corp.
Vishay Intertechnology, Inc.
|
| FFM107 FFM101 FFM105 FFM102 FFM103 FFM104 FFM106 |
Surface mount glass passivated fast recovery silicon rectifier. MaxVRRM = 1000V, maxVRMS = 700V, maxVDC = 1000V. Current 1.0A.
Surface mount glass passivated fast recovery silicon rectifier. MaxVRRM = 50V, maxVRMS = 35V, maxVDC = 50V. Current 1.0A.
Surface mount glass passivated fast recovery silicon rectifier. MaxVRRM = 600V, maxVRMS = 420V, maxVDC = 600V. Current 1.0A.
Surface mount glass passivated fast recovery silicon rectifier. MaxVRRM = 100V, maxVRMS = 70V, maxVDC = 100V. Current 1.0A.
Surface mount glass passivated fast recovery silicon rectifier. MaxVRRM = 200V, maxVRMS = 140V, maxVDC = 200V. Current 1.0A.
Surface mount glass passivated fast recovery silicon rectifier. MaxVRRM = 400V, maxVRMS = 280V, maxVDC = 400V. Current 1.0A.
Surface mount glass passivated fast recovery silicon rectifier. MaxVRRM = 800V, maxVRMS = 560V, maxVDC = 800V. Current 1.0A.
|
Rectron Semiconductor
|
| DL4003-13-F DL4004-13-F DL4001-13-F DL4002-13-F DL |
1.0A SURFACE MOUNT GLASS PASSIVATED RECTIFIER 1 A, 50 V, SILICON, SIGNAL DIODE
1.0A SURFACE MOUNT GLASS PASSIVATED RECTIFIER 1 A, 200 V, SILICON, SIGNAL DIODE
1.0A SURFACE MOUNT GLASS PASSIVATED RECTIFIER 1 A, 400 V, SILICON, SIGNAL DIODE
1.0A SURFACE MOUNT GLASS PASSIVATED RECTIFIER 1 A, 1000 V, SILICON, SIGNAL DIODE
|
Diodes Inc.
Diodes, Inc.
|
| 1N4001GP 1N4007GP 1N4006GP 1N4004GP 1N4005GP |
1.0 Ampere Glass Passivated Rectifiers(骞冲??存?1瀹??????????????娴??)
1.0 Ampere Glass Passivated Rectifiers(平均整流1安培的玻璃钝化结型整流器) 1 A, 400 V, SILICON, SIGNAL DIODE, DO-41
1.0 Ampere Glass Passivated Rectifiers(平均整流1安培的玻璃钝化结型整流器) 1 A, 800 V, SILICON, SIGNAL DIODE, DO-41
|
Fairchild Semiconductor, Corp.
Fairchild Semiconductor Corporation
|
| UG2001 UG2002 UG2003 UG2004 UG2005 |
2.0A ULTRA-FAST GLASS PASSIVATED RECTIFIER 2 A, 50 V, SILICON, RECTIFIER DIODE, DO-15
2.0A ULTRA-FAST GLASS PASSIVATED RECTIFIER 2 A, 400 V, SILICON, RECTIFIER DIODE, DO-15
(UG2001 - UG2005) 2.0A ULTRA-FAST GLASS PASSIVATED RECTIFIER
|
Diodes, Inc.
DIODES[Diodes Incorporated]
|
| CD214B-R3200 CD214B-R350 CD214B-R3800 CD214B-R3100 |
CD214B-R350~R31000 Glass Passivated Rectifiers 3 A, 200 V, SILICON, RECTIFIER DIODE, DO-214AA
CD214B-R350~R31000 Glass Passivated Rectifiers 3 A, 50 V, SILICON, RECTIFIER DIODE, DO-214AA
CD214B-R350~R31000 Glass Passivated Rectifiers 3 A, 800 V, SILICON, RECTIFIER DIODE, DO-214AA
CD214B-R350~R31000 Glass Passivated Rectifiers 3 A, 1000 V, SILICON, RECTIFIER DIODE, DO-214AA
|
Bourns, Inc.
BOURNS INC
|
| SF10JG SF10AG SF10DG SF10BG SF10CG SF10FG SF10GG S |
1.0A SUPER-FAST GLASS PASSIVATED RECTIFIER 1 A, 400 V, SILICON, SIGNAL DIODE, DO-41
1.0A SUPER-FAST GLASS PASSIVATED RECTIFIER 1 A, 50 V, SILICON, SIGNAL DIODE, DO-41
1.0A SUPER-FAST GLASS PASSIVATED RECTIFIER 1 A, 600 V, SILICON, SIGNAL DIODE, DO-41
|
Diodes, Inc.
DIODES[Diodes Incorporated]
|
| 20KW256A 20KW160 20KW160A 20KW216 20KW216A 20KW240 |
256.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor
160.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor
216.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor
240.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor
120.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor
192.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor
112.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor
300.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor
204.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor
232.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor
280.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor
172.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor
180.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor
144.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor
|
MDE Semiconductor
|
| 15KPJ45 15KPJ45A 15KPJ45C 15KPJ45CA 15KPJ58 15KPJ5 |
Glass passivated junction transient voltage suppressor. Vrwm = 210 V. Vbr(min/max) = 231/296.1 V @ It = 1.0 mA. Ir = 5 uA. Vc = 376 V @ Ipp = 40 A.
Glass passivated junction transient voltage suppressor. Vrwm = 190 V. Vbr(min/max) = 209/243.2 V @ It = 1.0 mA. Ir = 5 uA. Vc = 308 V @ Ipp = 49 A.
Glass passivated junction transient voltage suppressor. Vrwm = 220 V. Vbr(min/max) = 242/310.2 V @ It = 1.0 mA. Ir = 5 uA. Vc = 394 V @ Ipp = 38 A.
Glass passivated junction transient voltage suppressor. Vrwm = 110 V. Vbr(min/max) = 122/154.5 V @ It = 5.0 mA. Ir = 10 uA. Vc = 196 V @ Ipp = 77 A.
Glass passivated junction transient voltage suppressor. Vrwm = 160 V. Vbr(min/max) = 178/205.0 V @ It = 5.0 mA. Ir = 10 uA. Vc = 259 V @ Ipp = 58 A.
Glass passivated junction transient voltage suppressor. Vrwm = 160 V. Vbr(min/max) = 178/226.0 V @ It = 5.0 mA. Ir = 10 uA. Vc = 287 V @ Ipp = 52 A.
Glass passivated junction transient voltage suppressor. Vrwm = 130 V. Vbr(min/max) = 144/182.5 V @ It = 5.0 mA. Ir = 10 uA. Vc = 231 V @ Ipp = 65 A.
Glass passivated junction transient voltage suppressor. Vrwm = 120 V. Vbr(min/max) = 133/169.0 V @ It = 5.0 mA. Ir = 10 uA. Vc = 214 V @ Ipp = 70 A.
GLASS PASSIVATED JUNCTION TRANSIENT (VOLTAGE SUPPRESSOR VOLTAGE- 17 to 220 Volts 15000 Watt Peak Pulse Power) 玻璃钝化结瞬态（电压抑制电压20伏特175000脉冲峰值功率）
GLASS PASSIVATED JUNCTION TRANSIENT (VOLTAGE SUPPRESSOR VOLTAGE- 17 to 220 Volts 15000 Watt Peak Pulse Power) 玻璃钝化结瞬态（电压抑制电压20伏特75000脉冲峰值功率）
GLASS PASSIVATED JUNCTION TRANSIENT (VOLTAGE SUPPRESSOR VOLTAGE- 17 to 220 Volts 15000 Watt Peak Pulse Power) 玻璃钝化结瞬态（电压抑制电压220伏特75000脉冲峰值功率）
Glass passivated junction transient voltage suppressor. Vrwm = 120 V. Vbr(min/max) = 133/153.0 V @ It = 5.0 mA. Ir = 10 uA. Vc = 193 V @ Ipp = 78 A.
Glass passivated junction transient voltage suppressor. Vrwm = 130 V. Vbr(min/max) = 144/165.5 V @ It = 5.0 mA. Ir = 10 uA. Vc = 209 V @ Ipp = 72 A.
Glass passivated junction transient voltage suppressor. Vrwm = 170 V. Vbr(min/max) = 189/217.5 V @ It = 5.0 mA. Ir = 10 uA. Vc = 275 V @ Ipp = 55 A.
Glass passivated junction transient voltage suppressor. Vrwm = 110 V. Vbr(min/max) = 122/140.5 V @ It = 5.0 mA. Ir = 10 uA. Vc = 177 V @ Ipp = 85 A.
Glass passivated junction transient voltage suppressor. Vrwm = 170 V. Vbr(min/max) = 189/239.5 V @ It = 5.0 mA. Ir = 10 uA. Vc = 304 V @ Ipp = 49 A.
Glass passivated junction transient voltage suppressor. Vrwm = 190 V. Vbr(min/max) = 209/267.4 V @ It = 1.0 mA. Ir = 5 uA. Vc = 340 V @ Ipp = 44 A.
Glass passivated junction transient voltage suppressor. Vrwm = 210 V. Vbr(min/max) = 231/296.1 V @ It = 1.0 mA. Ir = 5 uA. Vc = 340 V @ Ipp = 44 A.
|
Pan Jit International I...
PANJIT[Pan Jit International Inc.]
PanJit International Inc.
PanJit International, Inc.
|
| CD214A-R150 CD214A-R1600 CD214A-R1800 |
CD214A-R150~R11600 Glass Passivated Rectifiers 1 A, 50 V, SILICON, SIGNAL DIODE, DO-214AC
CD214A-R150~R11600 Glass Passivated Rectifiers 1 A, 600 V, SILICON, SIGNAL DIODE, DO-214AC
CD214A-R150~R11600 Glass Passivated Rectifiers 1 A, 800 V, SILICON, SIGNAL DIODE, DO-214AC
|
Bourns Inc.
Bourns, Inc.
|
|
